? silikron semiconductor c orporation 20 11 . 2 . 23 version: 1 . 1 page 1 of 5 ssf 10 3 0 b absolute maximum ratings parameter max. units i d @t c = 25 ? c continuous d rain c urrent,vgs@10v 7 a i d @t c = 1 0 0 ? c continuous d rain c urrent,vgs@10v 5.0 i dm pulsed d rain c urrent 30 p d @t c = 2 5 ? c power d issipation 8. 8 w v gs g ate - to - source v oltage 20 v e as single p ulse a valanche e nergy 3 3 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C 5 5 to +1 75 ? c thermal resistance parameter min. typ. max. uni ts r jc junction - to - case 17 ? c/w r ja junction - to - a mbient 85 electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain - to - source b reakdown v oltage 100 v v gs =0v,i d =250a r ds(on) static drain - to - source o n - resistance 25 3 0 m v gs =10v,i d = 10 a v gs(th) gate t hreshold v oltage 2.0 3.1 4.0 v v ds =v gs ,i d =250a g fs forward t ransconductance 25 s v ds = 1 5 v,i d = 6.9 a i dss drain - to - source l eakage current 1 a v ds = 100 v ,v gs =0v 1 0 v ds = 100 v , v gs =0v,t j =1 5 0 ? c sop - 8 top view marking and pin assignmen t id = 7 a bv= 100 v rdson= 2 5 m feathers: ? advanced trench process technology ? u ltra low rdson , typical 25 mohm ? h igh a valanche e nergy , 100% test ? fully characterized a valanche voltage and current description: the ssf 10 3 0 b is a new generation of middle voltage and high cu rrent n C channel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability . ssf 1 0 3 0 b is assembled in high reliability and quali fied assembly house . application: ? p ower switching applicat ion
? silikron semiconductor c orporation 20 11 . 2 . 23 version: 1 . 1 page 2 of 5 ssf 10 3 0 b i gss gate - to - source f orward leakage 100 na v gs =20v gate - to - source r everse leakage - 100 v gs = - 20v q g total g ate c harge 42 nc i d = 6.9 a v dd = 3 0v v gs =10v q gs gate - to - source charge 1 5 q gd gate - to - drain("miller") charge 1 4.6 t d(on) turn - on d elay t ime 1 4.2 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v t r rise t ime 40 t d(off) turn - off d elay t ime 7.3 t f fall t ime 14 . 8 c iss in put c apacitance 190 pf v gs =0v v ds =25v f=1.0mhz c oss output c apacitance 135 c rss reverse t ransfer c apacitance 4.2 source - drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 7 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current . (body diode) 30 v sd diode forward voltage 1. 3 v t j = 2 5 ? c,i s = 30 a,v gs =0v t rr reverse recovery time 57 ns t j = 2 5 ? c,i f = 3.1 a di/dt=100a/s q rr reverse recovery charge 107 nc t on forward turn - on time intrinsic turn - on time is negligible (turn - on is dominated by ls + ld) notes: repeti tive rating; pu lse width limited by m ax junction temperature. t est condition: l =0 .3 mh, id = 15 a, vdd = 50 v pulse width300s , duty cycle1.5% ; rg = 25 ?? starting tj = 25c
? silikron semiconductor c orporation 20 11 . 2 . 23 version: 1 . 1 page 3 of 5 ssf 10 3 0 b transient thermal impedance curv e gate charge t est c ircuit eas test c ircuit switch time test circuit s witch waveforms z thja normalized transient thermal resistance v d d b v d s s l r g v d d r l r g 1 m a v g s
? silikron semiconductor c orporation 20 11 . 2 . 23 version: 1 . 1 page 4 of 5 ssf 10 3 0 b so p - 8 package information notes 1 . dimensions are inclusive of plating 2 . package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 6 mils . 3 . dimension l is measured in gauge plane. 4 . controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
? silikron semiconductor c orporation 20 11 . 2 . 23 version: 1 . 1 page 5 of 5 ssf 10 3 0 b attention: any and all silikron products described or contained herein do not have specifications that can handl e applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. cons ult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the indep endent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant des ign, and structural design. in the ev ent that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export licens e from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or re trieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron belie ves information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec , 200 8 . specifications and information herein are subject to change without notice.
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